EBIC CONTRAST OF DEFECTS IN CADMIUM TELLURIDE .2. THEORY

被引：20

作者：

SIEBER, B ^{[1
]}

机构：

[1] CNRS,PHYS MAT LAB,F-92190 MEUDON,FRANCE

来源：

PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES | 1987年 / 55卷 / 05期

关键词：

D O I：

10.1080/13642818708218346

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：585 / 598

页数：14

共 19 条

[1]

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[2]

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[6]

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[8] AN ANALYTICAL MODEL OF SEM AND STEM CHARGE COLLECTION IMAGES OF DISLOCATIONS IN THIN SEMICONDUCTOR LAYERS .2. EBIC IMAGES OF DISLOCATIONS [J].

DONOLATO, C .

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1981, 66 (02) :445-454

[9] AN ANALYTICAL MODEL OF SEM AND STEM CHARGE COLLECTION IMAGES OF DISLOCATIONS IN THIN SEMICONDUCTOR LAYERS .1. MINORITY-CARRIER GENERATION, DIFFUSION, AND COLLECTION [J].

DONOLATO, C .

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1981, 65 (02) :649-658

[10] MINORITY-CARRIER DIFFUSION LENGTH EBIC MEASUREMENTS IN CADMIUM TELLURIDE [J].

GAUGASH, P ;

MILNES, AG .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1981, 128 (04) :921-924

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