MINORITY-CARRIER DIFFUSION LENGTH EBIC MEASUREMENTS IN CADMIUM TELLURIDE

被引：4

作者：

GAUGASH, P ^{[1
]}

MILNES, AG ^{[1
]}

机构：

[1] CARNEGIE MELLON UNIV,CTR JOINING MAT,PITTSBURGH,PA 15213

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1981年 / 128卷 / 04期

关键词：

D O I：

10.1149/1.2127533

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

收藏

页码：921 / 924

页数：4

相关论文

共 19 条

[1] Bell R. O., 1970, Physica Status Solidi A, V1, P375, DOI 10.1002/pssa.19700010303
[2] Bell R. O., 1975, 11th IEEE Photovoltaic Specialists Conference, P497
[3] APPLICATION OF SCANNING ELECTRON-MICROSCOPY TO DETERMINATION OF SURFACE RECOMBINATION VELOCITY - GAAS
JASTRZEBSKI, L
LAGOWSKI, J
GATOS, HC
[J]. APPLIED PHYSICS LETTERS, 1975, 27 (10) : 537 - 539
[4] GROWTH OF SEMI-INSULATING CADMIUM TELLURIDE
KYLE, NR
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1971, 118 (11) : 1790 - &
[5] MINORITY-CARRIER DIFFUSION LENGTH MEASUREMENTS IN CDTE BY A PHOTOCURRENT TECHNIQUE
LASTRASMARTINEZ, A
RACCAH, PM
TRIBOULET, R
[J]. APPLIED PHYSICS LETTERS, 1980, 36 (06) : 469 - 471
[6] LINCOT D, 1979, 2ND EC PHOT SOL EN C, P424
[7] DEEP-LEVEL ENERGY SPECTROSCOPY IN P-TYPE CDTE USING TSC MEASUREMENTS
MARTIN, GM
FOGARASSY, E
FABRE, E
[J]. JOURNAL OF APPLIED PHYSICS, 1976, 47 (01) : 264 - 266
[8] Oakes J. J., 1975, 11th IEEE Photovoltaic Specialists Conference, P454
[9] EFFECT OF SURFACE PREPARATION AND HEAT-TREATMENT ON HOLE DIFFUSION LENGTHS IN VPE GAAS AND GAAS0.6P0.4
PARTIN, DL
MILNES, AG
VASSAMILLET, LF
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1979, 126 (09) : 1581 - 1583
[10] HOLE DIFFUSION LENGTHS IN VPE GAAS AND GAAS0.6P0.4 TREATED WITH TRANSITION-METALS
PARTIN, DL
MILNES, AG
VASSAMILLET, LF
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1979, 126 (09) : 1584 - 1588