EFFECT OF SURFACE PREPARATION AND HEAT-TREATMENT ON HOLE DIFFUSION LENGTHS IN VPE GAAS AND GAAS0.6P0.4

被引:9
作者
PARTIN, DL
MILNES, AG
VASSAMILLET, LF
机构
[1] CARNEGIE MELLON UNIV,CTR JOINING MAT,PITTSBURGH,PA 15213
[2] CARNEGIE MELLON UNIV,DEPT ELECT ENGN,PITTSBURGH,PA 15213
关键词
etch; III-V; impurity; lifetime;
D O I
10.1149/1.2129334
中图分类号
O646 [电化学、电解、磁化学];
学科分类号
081704 ;
摘要
Chemical etching of a semiconducting surface is a process which can deposit trace amounts of metals that can have significant effects on the bulk lifetime after heat-treatment. Several frequently used cleaning processes have been shown to be poor in this respect and improved versions are suggested. The effectiveness of an etchant in cleaning a surface of trace metallic impurities is greater for larger etching rates, and smaller for larger metallic impurity content in the etchant. © 1979, The Electrochemical Society, Inc. All rights reserved.
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页码:1581 / 1583
页数:3
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