LOW-TEMPERATURE TI-SILICIDE FORMING REACTION IN VERY THIN TI-SIO2/SI(111) CONTACT SYSTEMS

被引：12

作者：

IWAMI, M

HIRAKI, A

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1985年 / 24卷 / 05期

关键词：

D O I：

10.1143/JJAP.24.530

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：530 / 536

页数：7

共 18 条

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