HIGH-TEMPERATURE OPERATION OF SILICON-CARBIDE MOSFET

[1] BEASOM JD, 1981, 1981 INT EL DEV M NE, P350

[2] EXPERIMENTAL 3C-SIC MOSFET [J]. IEEE ELECTRON DEVICE LETTERS, 1986, 7 (07) : 404 - 406

[3] NISHINO S, 1984, 16TH INT C SOL STAT, P8

[4] HIGH-TEMPERATURE ELECTRICAL-PROPERTIES OF 3C-SIC EPITAXIAL LAYERS GROWN BY CHEMICAL VAPOR-DEPOSITION [J]. APPLIED PHYSICS LETTERS, 1984, 45 (01) : 72 - 73

[1] BEASOM JD, 1981, 1981 INT EL DEV M NE, P350

[2] EXPERIMENTAL 3C-SIC MOSFET [J]. IEEE ELECTRON DEVICE LETTERS, 1986, 7 (07) : 404 - 406

[3] NISHINO S, 1984, 16TH INT C SOL STAT, P8

[4] HIGH-TEMPERATURE ELECTRICAL-PROPERTIES OF 3C-SIC EPITAXIAL LAYERS GROWN BY CHEMICAL VAPOR-DEPOSITION [J]. APPLIED PHYSICS LETTERS, 1984, 45 (01) : 72 - 73