ELECTRONIC-STRUCTURE OF (113)-GROWN GAAS-(GAAL)AS SINGLE QUANTUM-WELLS UNDER BIAXIAL STRAIN FIELDS

被引：13

作者：

ELKHALIFI, Y ^{[1
]}

LEFEBVRE, P ^{[1
]}

ALLEGRE, J ^{[1
]}

GIL, B ^{[1
]}

MATHIEU, H ^{[1
]}

FUKUNAGA, T ^{[1
]}

机构：

[1] OKI ELECT IND CO LTD,HACHIOJI,TOKYO 193,JAPAN

来源：

SOLID STATE COMMUNICATIONS | 1990年 / 75卷 / 08期

关键词：

D O I：

10.1016/0038-1098(90)90223-X

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Optical properties of (1 1 3)-grown GaAs-(GaAl)As single quantum wells (SQW's) have been studied by wavelength- and piezomodulated spectroscopy. A supermodulation of light hole states is observed in piezomodulation spectroscopy. The theoretical methods required to compute the envelope functions and the stress dependence of the transition energies are detailed. A close agreement is obtained between the experimental observations and the theoretical predictions. © 1990.

引用

页码：677 / 682

页数：6

共 32 条

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