PREPARATION AND CHARACTERIZATION OF ELECTRODEPOSITED CUINSE2 THIN-FILMS

被引：36

作者：

SUDO, Y

ENDO, S

IRIE, T

机构：

[1] Department of Electrical Engineering, Science University of Tokyo, Shinjuku-ku, Tokyo

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1993年 / 32卷 / 04期

关键词：

CUINSE2; THIN FILM; SOLAR CELL; ELECTRODEPOSITION; CHALCOPYRITE SEMICONDUCTOR;

D O I：

10.1143/JJAP.32.1562

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

CuInSe2 thin films were prepared on SnO2-coated glass by electrodeposition from aqueous solution containing CuCl2, InCl3 and SeO2. The deposition was carried out by varying cathode potential. It was found that the Cu/In ratio which influences CuInSe2 characteristics greatly can be controlled by the cathode potential. Annealing of as-deposited films in N2 atmosphere at 350-degrees-C was found to result in the formation of CuInSe2 films having a chalcopyrite structure. With the use of these annealed CuInSe2 thin films, CdS/CuInSe2 thin-film solar cells were formed as a preliminary step and the conversion efficiency of 1.49% was obtained.

引用

页码：1562 / 1567

页数：6

共 8 条

[1] DEPOSITION OF CUINSE2 FILMS BY A 2-STAGE PROCESS UTILIZING E-BEAM EVAPORATION [J].