CHARACTERISTICS OF Y-BA-CU-O SUPERCONDUCTOR FILMS ON GAAS WITH AN AL2O3 OR ALGAO3 BUFFER LAYER

被引：8

作者：

SHEWCHUN, J

CHEN, Y

HOLDER, JS

UHER, C

机构：

[1] UNIV MICHIGAN,APPL PHYS PROGRAM,ANN ARBOR,MI 48109

[2] UNIV MICHIGAN,DEPT CHEM,ANN ARBOR,MI 48109

[3] UNIV MICHIGAN,DEPT PHYS,ANN ARBOR,MI 48109

来源：

APPLIED PHYSICS LETTERS | 1991年 / 58卷 / 23期

关键词：

D O I：

10.1063/1.104789

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

By depositing a buffer layer of Al203 on GaAs, we have been able to laser ablate a superconducting film of Y1Ba2Cu3O7-x overtop. The onset of superconductivity is 92 K and zero resistance is observed at 80 K in a structure with a suitably annealed Al2O3 film which is converted to AlGaO3. Both the Al203-GaAs and the Al203-Y1Ba2Cu3O7-x interfaces are remarkably well preserved with virtually no interdiffusion or interaction. The Al2O3 or homolog AlGaO3 film also prevents decomposition of the GaAs at the deposition temperature of 730-degrees-C.

引用

页码：2704 / 2706

页数：3

共 10 条

[1]

BHASIN KB, 1990, IEEE MTT S, P269

[2]

DUTTA B, 1989, SOLID STATE TECHNOL, P106

[3]

HAMMOND RB, 1990, IEEE MIC S, V2, P867

[4]

HOFFMAN D, 1970, J VAC SCI TECHNOL, V8, P107