DEPENDENCY OF ADHESION BEHAVIOR ON THERMAL-STRESS DISTRIBUTION IN PHOTORESIST MICROPATTERNS

被引:3
作者
KAWAI, A [1 ]
NAGATA, H [1 ]
TAKATA, M [1 ]
机构
[1] NAGAOKA UNIV TECHNOL,DEPT ELECT ENGN,NAGAOKA,NIIGATA 94021,JAPAN
来源
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1993年 / 32卷 / 02期
关键词
ADHESION; THERMAL STRESS; RHEOLOGY; FINITE ELEMENT MODELING; PHOTORESIST; TENSILE STRESS; STRESS CONCENTRATION; LITHOGRAPHY; INTRUSION; ELASTICITY;
D O I
10.1143/JJAP.32.1020
中图分类号
O59 [应用物理学];
学科分类号
摘要
We report an excellent correlation between adhesive behavior in HF aqueous solution and internal distribution of thermal stress in a photoresist pattern. The stress distribution was analyzed using the two-dimensional finite element modeling in the cross section of the photoresist pattern. The large envelope shape, which indicates weak adhesion, was confirmed by the concentration of stress at the resist-substrate interface. In particular, the hardened layer of the photoresist pattern surface has the effect of forming the two-step shape of the etching envelope due to isotropic and lateral intrusion.
引用
收藏
页码:1020 / 1024
页数:5
相关论文
共 16 条
[1]  
ADAM T, 1980, J ADHESION, V11, P279
[2]   DEEP UV HARDENING OF POSITIVE PHOTORESIST PATTERNS [J].
ALLEN, R ;
FOSTER, M ;
YEN, YT .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1982, 129 (06) :1379-1381
[3]   3-DIMENSIONAL TOPOGRAPHY SIMULATION-MODEL - ETCHING AND LITHOGRAPHY [J].
FUJINAGA, M ;
KOTANI, N ;
KUNIKIYO, T ;
ODA, H ;
SHIRAHATA, M ;
AKASAKA, Y .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1990, 37 (10) :2183-2192
[4]  
Groothuis S. K., 1987, 25th Annual Proceedings: Reliability Physics 1987 (Cat. No.87CH2388-7), P1, DOI 10.1109/IRPS.1987.362147
[5]  
Jones R. E. Jr., 1987, 25th Annual Proceedings: Reliability Physics 1987 (Cat. No.87CH2388-7), P9, DOI 10.1109/IRPS.1987.362148
[6]   RELATIONSHIP BETWEEN FRACTURE MECHANICS AND SURFACE ENERGETICS FAILURE CRITERIA [J].
KAELBLE, DH .
JOURNAL OF APPLIED POLYMER SCIENCE, 1974, 18 (06) :1869-1889
[7]   ADHESION BETWEEN PHOTORESIST AND INORGANIC SUBSTRATE [J].
KAWAI, A ;
NAGATA, H ;
ABE, H ;
TAKATA, M .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1991, 30 (01) :121-125
[8]   SURFACE-ACTIVE BUFFERED HYDROGEN-FLUORIDE HAVING EXCELLENT WETTABILITY FOR ULSI PROCESSING [J].
KIKUYAMA, H ;
MIKI, N ;
SAKA, K ;
TAKANO, J ;
KAWANABE, I ;
MIYASHITA, M ;
OHMI, T .
IEEE TRANSACTIONS ON SEMICONDUCTOR MANUFACTURING, 1990, 3 (03) :99-108
[9]  
KLYMKO PW, 1988, 1988 P KTI MICR SEM, P209
[10]  
KOLYER JM, 1979, 1979 P KOD MICR SEM, P150