GAAS-ZN SOLIDUS AT 1000DEGREESC

被引：7

作者：

TUCK, B ^{[1
]}

机构：

[1] UNIV NOTTINGHAM,DEPT ELECT & ELECTR ENGN,NOTTINGHAM NG7 2RD,ENGLAND

来源：

JOURNAL OF PHYSICS D-APPLIED PHYSICS | 1976年 / 9卷 / 14期

关键词：

D O I：

10.1088/0022-3727/9/14/015

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：2061 / 2073

页数：13

共 17 条

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HART, M ;

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HECKINGBOTTOM, R .

SOLID-STATE ELECTRONICS, 1976, 19 (04) :331-&

[2] SOLUBILITIES + DISTRIBUTION COEFFICIENTS OF ZN IN GAAS + GAP [J].

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PEARSON, GL .

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PEARSON, GL .

JOURNAL OF APPLIED PHYSICS, 1975, 46 (07) :2986-2991

[4] DIFFUSION + SOLUBILITY OF COPPER IN EXTRINSIC + INTRINSIC GERMANIUM SILICON + GALLIUM ARSENIDE [J].

HALL, RN ;

RACETTE, JH .

JOURNAL OF APPLIED PHYSICS, 1964, 35 (02) :379-&

[5]

JORDAN AS, 1971, METALL TRANS, V2, P1965

[6] ISOCONCENTRATION DIFFUSION OF ZINC IN GAAS AT 1000 DEGREES C [J].

KADHIM, MAH ;

TUCK, B .

JOURNAL OF MATERIALS SCIENCE, 1972, 7 (01) :68-&

[7]

KADHIM MAH, 1971, THESIS U NOTTINGHAM

[8] CALCULATIONS OF POINT DEFECT CONCENTRATIONS AND NONSTOICHIOMETRY IN GAAS [J].

LOGAN, RM ;

HURLE, DTJ .

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[9] SOLUBILITY OF ZINC IN GALLIUM ARSENIDE [J].

MCCALDIN, JO .

JOURNAL OF APPLIED PHYSICS, 1963, 34 (06) :1748-&

[10] GALLIUM-ARSENIC-ZINC SYSTEM [J].

PANISH, MB .

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