HOPPING-CONDUCTIVITY CHANGES WITH CONCENTRATION OF COMPENSATING CENTERS

被引：7

作者：

MASSARANI, B ^{[1
]}

CAILLOT, M ^{[1
]}

BOURGOIN, JC ^{[1
]}

机构：

[1] ECOLE NORMALE SUPER,CNRS LAB,GRP PHYS SOLIDES,F-755221 PARIS 05,FRANCE

来源：

PHYSICAL REVIEW B | 1977年 / 15卷 / 04期

关键词：

D O I：

10.1103/PhysRevB.15.2224

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：2224 / 2230

页数：7

共 14 条

[1]

AMBEGAOKAR V, 1971, PHYS REV B, V4, P1612

[2]

Bourgoin J., 1970, Radiation Effects, V2, P287, DOI 10.1080/00337576908243991

[3]

BOURGOIN JC, TO BE PUBLISHED

[4]

Caillot M., 1975, Lattice Defects in Semiconductors, 1974, P280

[5]

CAILLOT M, UNPUBLISHED

[6]

CLARK CD, 1961, DISCUSS FARADAY SOC, V31, P96

[7] PHONON-ASSISTED JUMP RATE IN NONCRYSTALLINE SOLIDS [J].

EMIN, D .

[8]

Massarani B., 1975, Lattice Defects in Semiconductors, 1974, P301

[9]

MASSARANI B, UNPUBLISHED

[10] IMPURITY CONDUCTION AT LOW CONCENTRATIONS [J].

MILLER, A ;

ABRAHAMS, E .

PHYSICAL REVIEW, 1960, 120 (03) :745-755