A REVISED BOUNDARY-CONDITION FOR THE NUMERICAL-ANALYSIS OF SCHOTTKY-BARRIER DIODES

被引:25
作者
ADAMS, J
TANG, TW
机构
关键词
D O I
10.1109/EDL.1986.26460
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:525 / 527
页数:3
相关论文
共 7 条
[1]   MONTE-CARLO SIMULATION OF CURRENT TRANSPORT IN FORWARD-BIASED SCHOTTKY-BARRIER DIODES [J].
BACCARANI, G ;
MAZZONE, AM .
ELECTRONICS LETTERS, 1976, 12 (02) :59-60
[2]   ON THE CURRENT-VOLTAGE CHARACTERISTICS OF EPITAXIAL SCHOTTKY-BARRIER DIODES [J].
CHUANG, CT .
SOLID-STATE ELECTRONICS, 1984, 27 (04) :299-304
[3]   CURRENT TRANSPORT IN METAL-SEMICONDUCTOR BARRIERS [J].
CROWELL, CR ;
SZE, SM .
SOLID-STATE ELECTRONICS, 1966, 9 (11-1) :1035-&
[4]   A SIMPLE-MODEL FOR COMPUTER-SIMULATION OF SCHOTTKY-BARRIER DIODES [J].
GUO, SF .
SOLID-STATE ELECTRONICS, 1984, 27 (06) :537-543
[5]  
Selberherr, 1984, ANAL SIMULATION SEMI
[6]   DIFFUSION OF HOT AND COLD ELECTRONS IN SEMICONDUCTOR BARRIERS [J].
STRATTON, R .
PHYSICAL REVIEW, 1962, 126 (06) :2002-&
[7]  
WAGNER L, 1982, IEDM