APPLICATION OF SNOX THIN-FILMS PREPARED BY MICROWAVE PLASMA CVD TO A NOX SENSOR

被引:2
作者
NAGASE, H
HIRONO, T
OKAMOTO, Y
IMANAKA, T
机构
[1] Dept. of Chemical Engineering, Osaka University, Toyonaka
关键词
ENVIRONMENT; SENSOR; NITROGEN OXIDES; TIN OXIDE; CHEMICAL VAPOR DEPOSITION; MICROWAVE PLASMA;
D O I
10.1252/kakoronbunshu.19.856
中图分类号
TQ [化学工业];
学科分类号
0817 ;
摘要
Tin oxide thin films were deposited by a microwave plasma CVD method using tetramethyltin mixed in oxygen and argon. Gas responses of the film were examined by measuring the change in film resistance. The resistance increased when the film was exposed to air containing NO2. A reversible response was observed above 250-degrees-C.
引用
收藏
页码:856 / 862
页数:7
相关论文
共 6 条
[1]   THIN-FILM SEMICONDUCTOR NOX SENSOR [J].
CHANG, SC .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1979, 26 (12) :1875-1880
[2]  
HIRONO T, 1991, 68TH S CAT SOC JAP, P226
[3]  
SATAKE K, 1990, 3RD P INT M CHEM SEN, P334
[4]  
TAMAKI J, 1989, SURF SCI, V221, P183, DOI 10.1016/0039-6028(89)90574-8
[5]  
TAMAKI J, 1991, 24TH AUT M SOC CHEM, P153
[6]   SELECTIVE REDUCTION OF NITRIC-OXIDE OVER NOBLE-METALS [J].
TAYLOR, KC ;
SCHLATTER, JC .
JOURNAL OF CATALYSIS, 1980, 63 (01) :53-71