MODELS FOR 2 INTENSE SI-H INFRARED STRETCHING BANDS IN FZ-SI GROWN IN HYDROGEN

被引：8

作者：

ONG, CK

KHOO, GS

机构：

[1] Natl Univ of Singapore, Singapore, Natl Univ of Singapore, Singapore

来源：

JOURNAL OF PHYSICS C-SOLID STATE PHYSICS | 1987年 / 20卷 / 03期

关键词：

CRYSTALS; -; Growing; HYDROGEN; SPECTROSCOPY; INFRARED;

D O I：

10.1088/0022-3719/20/3/012

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

We have used the complete neglect of differential orbital (CNDO) method to investigate the two models proposed by Shi et al to account for the two intense Si-H infrared stretching bands in the floating zone melted silicon crystal grown in hydrogen atmosphere (FZ-Si:H). Our results are such that the two models proposed give minimum total energies and the Si-H bond length is found to be about 1. 6 A with the H atom located at the anti-bonding site, consistent with the experimental value determined by Picraux and Vook.

引用

页码：419 / 423

页数：5

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