EFFECT OF THE CHEMICAL NATURE OF TRANSITION-METAL SUBSTRATES ON CHEMICAL-VAPOR-DEPOSITION OF DIAMOND

被引:110
作者
CHEN, X
NARAYAN, J
机构
[1] Department of Materials Science and Engineering, North Carolina State University, Raleigh
关键词
D O I
10.1063/1.354420
中图分类号
O59 [应用物理学];
学科分类号
摘要
Chemical-vapor deposition of diamond on transition-metal substrates of Cu, Ni, Fe, and their alloys NiAl, Ni3Al, FeSi2, and FeSi has been investigated. It is shown that diamond grows easily on Cu with a very small amount of graphite, while on Ni and Fe there is rapid growth of the graphite layer before diamond deposition. The formation of graphite is attributed to the decomposition of carbon-containing precursors due to the strong catalytic reactivity of Ni and Fe substrates with carbon. The deactivation of these substrates by forming NiAl and FeSi2 results in the suppression of graphite and formation of high-quality diamond. However, for Ni3Al and FeSi substrates which are not completely deactivated, deposition of graphite still takes place. A mechanism based on the electronic structure of substrate atoms, particularly on the 3d shell structure of Cu, Ni, and Fe is proposed to understand the above behavior. Requirements for the stabilization of sp3 bonding of carbon on different substrates are discussed.
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页码:4168 / 4173
页数:6
相关论文
共 15 条
[1]   ACTIVATION OF METHANE ON IRON, NICKEL, AND PLATINUM SURFACES - A MOLECULAR-ORBITAL STUDY [J].
ANDERSON, AB ;
MALONEY, JJ .
JOURNAL OF PHYSICAL CHEMISTRY, 1988, 92 (03) :809-812
[2]   LOW-PRESSURE, METASTABLE GROWTH OF DIAMOND AND DIAMONDLIKE PHASES [J].
ANGUS, JC ;
HAYMAN, CC .
SCIENCE, 1988, 241 (4868) :913-921
[3]   DIRECT CONVERSION OF GRAPHITE TO DIAMOND IN STATIC PRESSURE APPARATUS [J].
BUNDY, FP .
JOURNAL OF CHEMICAL PHYSICS, 1963, 38 (03) :631-&
[4]   DIAMOND CHEMICAL VAPOR-DEPOSITION [J].
CELII, FG ;
BUTLER, JE .
ANNUAL REVIEW OF PHYSICAL CHEMISTRY, 1991, 42 (01) :643-684
[5]   NEW MECHANISMS FOR CHEMISTRY AT SURFACES [J].
CEYER, ST .
SCIENCE, 1990, 249 (4965) :133-139
[6]  
CHEN X, 2ND P INT S DIAM MAT, P73
[7]   NUCLEATION AND GROWTH OF DIAMOND ON FESI2/SI SUBSTRATES BY HOT FILAMENT CHEMICAL VAPOR-DEPOSITION [J].
GODBOLE, VP ;
NARAYAN, J .
JOURNAL OF APPLIED PHYSICS, 1992, 71 (10) :4944-4948
[8]  
HANSEN M, 1958, CONSTITUTION BINARY, P353
[9]  
NIEUWENHUYS BE, 1987, STUDIES SURFACE SCI, P467
[10]  
SATO Y, 1991, NEW DIAMOND SCI TECH, P371