INDIRECT ABSORPTION IN GE UNDER COMBINED STATIC AND OSCILLATORY STRESS

被引:23
作者
BALSLEV, I
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10.1016/0375-9601(67)90509-9
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O4 [物理学];
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0702 ;
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页码:113 / &
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共 8 条
[1]   INFLUENCE OF UNIAXIAL STRESS ON INDIRECT ABSORPTION EDGE IN SILICON AND GERMANIUM [J].
BALSLEV, I .
PHYSICAL REVIEW, 1966, 143 (02) :636-&
[2]   HIGH-SENSITIVITY PIEZOREFLECTIVITY [J].
ENGELER, WE ;
FRITZSCHE, H ;
GARFINKEL, M ;
TIEMANN, JJ .
PHYSICAL REVIEW LETTERS, 1965, 14 (26) :1069-+
[3]   OBSERVATION OF PHONON ASSISTED INDIRECT TRANSITIONS BY STRESS MODULATED OPTICAL TRANSMISSION [J].
ENGELER, WE ;
GARFINKEL, M ;
TIEMANN, JJ .
PHYSICAL REVIEW LETTERS, 1966, 16 (06) :239-+
[4]  
GERHARDT U, 1965, PHYS REV LETTERS, V13, P401
[5]  
GIBSON AF, 1960, PROGRESS SEMICOND ED, V5, P53
[6]  
MCLEAN TP, 1960, PROGR SEMICOND, V5, P53
[8]   PIEZOREFLECTANCE IN GE [J].
PHILIPP, HR ;
DASH, WC ;
EHRENREICH, H .
PHYSICAL REVIEW, 1962, 127 (03) :762-&