MODELING OF SLOPED SIDEWALLS FORMED BY SIMULTANEOUS ETCHING AND DEPOSITION

被引：8

作者：

GROSS, M

HORWITZ, CM

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1989年 / 7卷 / 03期

关键词：

D O I：

10.1116/1.584780

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：534 / 541

页数：8

共 32 条

[1] ABE H, 1975, JPN J APPL PHYS, V14, P1824
[2] BLAZED ION-ETCHED HOLOGRAPHIC GRATINGS
AOYAGI, Y
NAMBA, S
[J]. OPTICA ACTA, 1976, 23 (09): : 701 - 707
[3] ANISOTROPIC ETCHING OF SILICON
BEAN, KE
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1978, 25 (10) : 1185 - 1193
[4] BOSCH MA, 1981, APPL PHYS LETT, V38, P264, DOI 10.1063/1.92338
[5] TRENCH ETCHES IN SILICON WITH CONTROLLABLE SIDEWALL ANGLES
CARLILE, RN
LIANG, VC
PALUSINSKI, OA
SMADI, MM
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1988, 135 (08) : 2058 - 2064
[6] DIRECTIONAL REACTIVE-ION-ETCHING OF INP WITH CL-2 CONTAINING GASES
COLDREN, LA
RENTSCHLER, JA
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 19 (02): : 225 - 230
[7] ON THE FORMATION OF PLANAR-ETCHED FACETS IN GAINASP INP DOUBLE HETEROSTRUCTURES
COLDREN, LA
FURUYA, K
MILLER, BI
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1983, 130 (09) : 1918 - 1926
[8] CONTOLINI RJ, 1988, J ELECTROCHEM SOC, V135, P292
[9] TEMPERATURE-DEPENDENCE OF INP AND GAAS ETCHING IN A CHLORINE PLASMA
DONNELLY, VM
FLAMM, DL
TU, CW
IBBOTSON, DE
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1982, 129 (11) : 2533 - 2537
[10] GLOERSEN PG, 1976, SOLID STATE TECH APR, P68