ZNSE/ZNSE0.92S0.08/GAAS SINGLE-CRYSTAL WAVE-GUIDES AS VISIBLE MODULATORS

被引:18
作者
JUPINA, MH [1 ]
GARMIRE, EM [1 ]
SHIBATA, N [1 ]
ZEMBUTSU, S [1 ]
机构
[1] NIPPON TELEGRAPH & TEL PUBL CORP, IBARAKI ELECT COMMUN LABS, TOKAI, IBARAKI 31911, JAPAN
关键词
D O I
10.1063/1.103769
中图分类号
O59 [应用物理学];
学科分类号
摘要
Electro-optic and electroabsorptive modulations have been demonstrated in Schottky barriers in epitaxial ZnSe waveguides with cladding layers of ZnSeS grown single crystal on GaAs substrates. Using an argon laser we demonstrate guided-wave electro-optic modulation with voltages which are predicted by bulk ZnSe electro-optic coefficients. With a 3 mm sample, half-wave modulation was observed at 4 V per micron electrode separation. Electroapsorption with 9.2 dB modulation in a 0.6-mm-long sample was observed at 488 nm. With surface electrodes, rectification within the Schottky barrier made possible a unique rectified optical modulation.
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页码:2894 / 2896
页数:3
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