HARMONIC DEVICE LINE SIMULATION OF NEGATIVE-RESISTANCE MICROWAVE MESFET OSCILLATORS

被引：2

作者：

ONGAREAU, E

GHANNOUCHI, FM

BOSISIO, RG

机构：

[1] Microwave Research Laboratory Electrical Engineering Department, Ecole Polytechnique de Montréal, Montréal, Quebec, H3C 3A7, C.P. 6709, Succursale A

来源：

MICROWAVE AND OPTICAL TECHNOLOGY LETTERS | 1990年 / 3卷 / 09期

关键词：

FET oscillators; harmonic balance techniques; negative resistance;

D O I：

10.1002/mop.4650030907

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper, the effects of harmonic load impedance of the terminating network on the input impedance and the output power of the equivalent one‐port negative resistance MESFET oscillators are investigated. Harmonic balance techniques in conjunction with a nonlinear MESFET transistor model are used to simulate the nonlinear response of such one‐port negative resistance oscillators. An appropriate Fourier development of steady state voltage and a current wave forms obtained for a given amplitude and frequency signal are used to calculate the input negative resistance and reactance in device line simulations. It was found that the output power of a one‐port negative resistance MESFET oscillator can be maximized by optimizing the harmonic load impedances of the terminating network. Copyright © 1990 Wiley Periodicals, Inc., A Wiley Company

引用

页码：317 / 324

页数：8