NOVEL HETERODIMENSIONAL DIODES AND TRANSISTORS

被引：18

作者：

SHUR, MS

PEATMAN, WC

PARK, H

GRIMM, W

HURT, M

机构：

[1] Department of Electrical Engineering, University of Virginia, Charlottesville, VA 22903-2442, Thornton Hall

来源：

SOLID-STATE ELECTRONICS | 1995年 / 38卷 / 09期

关键词：

2DEG; SCHOTTKY; TUNNELING; MESFET;

D O I：

10.1016/0038-1101(95)00038-U

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We describe novel heterodimensional devices which utilize Schottky barriers to a two-dimensional (2D) electron gas. These devices include a 2D-3D Schottky diode, an AlaAs/GaAs Schottky Gated Resonant Tunneling Transistor (SGRTT), an AlGaAs/InGaAs 2D Metal Semiconductor Field Effect Transistor (2D MESFET), and a Coaxial MESFET. These devices hold promise of ultra low power, high speed operation. The 1 micron wide 2D MESFET, which has a very low output conductance and a steep subthreshold slope, exhibited the highest transconductance of any 1 mu m wide device.

引用

页码：1727 / 1730

页数：4

共 12 条

[1] THEORY OF JUNCTION BETWEEN 2-DIMENSIONAL ELECTRON-GAS AND P-TYPE SEMICONDUCTOR [J].