NOVEL RESONANT-TUNNELING TRANSISTOR WITH HIGH TRANSCONDUCTANCE AT ROOM-TEMPERATURE

被引：27

作者：

PEATMAN, WCB

BROWN, ER

ROOKS, MJ

MAKI, P

GRIMM, WJ

SHUR, M

机构：

[1] MIT,LINCOLN LAB,LEXINGTON,MA 02173

[2] CORNELL UNIV,NATL NANOFABRICAT FACIL,ITHACA,NY 14853

来源：

IEEE ELECTRON DEVICE LETTERS | 1994年 / 15卷 / 07期

基金：

美国国家科学基金会;

关键词：

D O I：

10.1109/55.294081

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A resonant tunneling transistor (RTT) utilizing a novel heterodimensional Schottky gate technology is described. The gate is formed by electroplating Pt/Au onto the side of an AlGaAs/GaAs double barrier structure. The gate voltage modulates the drain current by modulating the area of the quasi-two dimensional electron accumulation layer which forms above the source barrier under drain-source bias. Room temperature transistor characteristics included a peak current of 225 mA/mm and peak transconductance of 218 mS/mm. The ultrafine fabrication process is also discussed.

引用

页码：236 / 238

页数：3

共 9 条

[1] OSCILLATIONS UP TO 712 GHZ IN INAS/ALSB RESONANT-TUNNELING DIODES [J].