BE-IMPLANTED IN0.53GA0.47AS DIODES WITH IDEAL FORWARD CURRENT-VOLTAGE CHARACTERISTICS

被引：4

作者：

ZEMEL, A ^{[1
]}

TELL, B ^{[1
]}

LEHENY, RF ^{[1
]}

HARRISON, T ^{[1
]}

BRIDGES, TJ ^{[1
]}

BURKHARDT, EG ^{[1
]}

LIAO, ASH ^{[1
]}

BEEBE, ED ^{[1
]}

机构：

[1] AT&T BELL LABS,HOLMDEL,NJ 07733

来源：

JOURNAL OF APPLIED PHYSICS | 1984年 / 56卷 / 06期

关键词：

D O I：

10.1063/1.334198

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1856 / 1858

页数：3

共 14 条

[1] APPLICATIONS OF ELECTROCHEMICAL METHODS FOR SEMICONDUCTOR CHARACTERIZATION .1. HIGHLY REPRODUCIBLE CARRIER CONCENTRATION PROFILING OF VPE''HI-LO'' NORMAL-GAAS [J].

AMBRIDGE, T ;

STEVENSON, JL ;

REDSTALL, RM .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1980, 127 (01) :222-228

[2] PROPERTIES OF GALLIUM ARSENIDE DIODES BETWEEN 4.2 DEGREES AND 300 DEGREES K [J].

DUMIN, DJ ;

PEARSON, GL .

JOURNAL OF APPLIED PHYSICS, 1965, 36 (11) :3418-&

[3] IN0.53GA0.47AS PHOTO-DIODES WITH DARK CURRENT LIMITED BY GENERATION-RECOMBINATION AND TUNNELING [J].

FORREST, SR ;

LEHENY, RF ;

NAHORY, RE ;

POLLACK, MA .

APPLIED PHYSICS LETTERS, 1980, 37 (03) :322-325

[4]

GROVE AS, 1967, PHYS TECHNOL S, P172

[5] EFFECT OF SURFACE RECOMBINATION ON CURRENT IN ALXGA1-XAS HETEROJUNCTIONS [J].

HENRY, CH ;

LOGAN, RA ;

MERRITT, FR .

JOURNAL OF APPLIED PHYSICS, 1978, 49 (06) :3530-3542

[6] INGAAS-INP P-I-N PHOTO-DIODES FOR LIGHTWAVE COMMUNICATIONS AT THE 0.95-1.65 MU-M WAVELENGTH [J].

LEE, TP ;

BURRUS, CA ;

DENTAI, AG .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1981, 17 (02) :232-238

[7]

MATSUSHIMA Y, 1980, JPN J APPL PHYS, V19, P693

[8] GA0.47IN0.53AS - A TERNARY SEMICONDUCTOR FOR PHOTODETECTOR APPLICATIONS [J].

PEARSALL, TP .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1980, 16 (07) :709-720

[9] ELECTRICAL TRANSPORT IN NGE-PGAAS HETEROJUNCTIONS [J].

RIBEN, AR ;

FEUCHT, DL .

INTERNATIONAL JOURNAL OF ELECTRONICS, 1966, 20 (06) :583-&

[10] CARRIER GENERATION AND RECOMBINATION IN P-N JUNCTIONS AND P-N JUNCTION CHARACTERISTICS [J].

SAH, CT ;

NOYCE, RN ;

SHOCKLEY, W .

PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1957, 45 (09) :1228-1243

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