FORMATION OF P-N-JUNCTIONS AND SILICIDES IN SILICON USING A HIGH-PERFORMANCE LASER-BEAM HOMOGENIZATION SYSTEM

被引：5

作者：

WAGNER, M ^{[1
]}

WITZMANN, A ^{[1
]}

GEILER, HD ^{[1
]}

HEINIG, KH ^{[1
]}

机构：

[1] ZFK ROSSENDORF,O-8051 DRESDEN,GERMANY

来源：

APPLIED SURFACE SCIENCE | 1989年 / 43卷

关键词：

D O I：

10.1016/0169-4332(89)90222-5

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

引用

页码：260 / 263

页数：4

共 8 条

[1]

[Anonymous], 1982, LASER ANNEALING SEMI

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[3]

Dainty J. C., 1975, LASER SPECKLE RELATE

[4] SHALLOW JUNCTIONS BY ION-IMPLANTATION AND RAPID THERMAL ANNEALING [J].

HILL, C .

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1987, 19-20 :348-358

[5]

Leamy H.J., 1982, J APPL PHYS, V53, P51

[6] DAMAGE INDUCED BY LASER IRRADIATION OF NISI2/SI (111) STRUCTURES [J].

PRIOLO, F ;

GRIMALDI, MG ;

BAERI, P ;

RIMINI, E ;

LAMANTIA, A .

JOURNAL OF APPLIED PHYSICS, 1987, 61 (07) :2522-2526

[7]

TUNG RT, 1987, APPL PHYS LETT, V43, P476

[8] LASER PROCESSING FOR HIGH-EFFICIENCY SI SOLAR-CELLS [J].

YOUNG, RT ;

WOOD, RF ;

CHRISTIE, WH .

JOURNAL OF APPLIED PHYSICS, 1982, 53 (02) :1178-1189

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