SHALLOW JUNCTIONS BY ION-IMPLANTATION AND RAPID THERMAL ANNEALING

被引：25

作者：

HILL, C

机构：

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 1987年 / 19-20卷

关键词：

D O I：

10.1016/S0168-583X(87)80071-X

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

引用

页码：348 / 358

页数：11

共 34 条

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[8]

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[9] DOPANT REDISTRIBUTION IN SILICON-ON-SAPPHIRE FILMS DURING THERMAL ANNEALING [J].

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