SHALLOW JUNCTIONS BY ION-IMPLANTATION AND RAPID THERMAL ANNEALING

被引：25

作者：

HILL, C

机构：

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 1987年 / 19-20卷

关键词：

D O I：

10.1016/S0168-583X(87)80071-X

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

引用

页码：348 / 358

页数：11

共 34 条

[21]

KALISH R, 1983, APPL PHYS LETT, V43, P957

[22] CHANNEL ION-IMPLANTATION FOR SMALL-GEOMETRY HIGH-PERFORMANCE CMOS-SOS CIRCUITS [J].

LEWIS, AG ;

BRASSINGTON, MP ;

PARTRIDGE, SL .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1986, 33 (03) :335-344

[23] CHANNELING EFFECT OF LOW-ENERGY BORON IMPLANT IN (100) SILICON [J].

LIU, TM ;

OLDHAM, WG .

IEEE ELECTRON DEVICE LETTERS, 1983, 4 (03) :59-62

[24] RAPID ELECTRON-BEAM ISOTHERMAL PROCESSING OF ARSENIC-IMPLANTED NMOS DEVICES [J].

MCMAHON, RA ;

AHMED, H ;

GODFREY, D ;

YALLUP, KJ .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1983, 30 (11) :1550-1555

[25] EFFECTS OF GRAIN-BOUNDARIES ON LASER CRYSTALLIZED POLY-SI MOSFETS [J].

NG, KK ;

CELLER, GK ;

POVILONIS, EI ;

FRYE, RC ;

LEAMY, HJ ;

SZE, SM .

ELECTRON DEVICE LETTERS, 1981, 2 (12) :316-318

[26] TRANSIENT-ENHANCED DIFFUSION DURING FURNACE AND RAPID THERMAL ANNEALING OF ION-IMPLANTED SILICON [J].

PENNYCOOK, SJ ;

NARAYAN, J ;

HOLLAND, OW .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1985, 132 (08) :1962-1968

[27]

PENSL S, 1984, ENERGY BEAM SOLID IN, P347

[28]

Sadana D. K., 1985, Microscopy of Semiconducting Materials, 1985. Proceedings of the Royal Microscopical Society Conference, P93

[29]

Sedgwick T. O., 1984, VLSI Science and Technology-1984. Proceedings of the Second International Symposium on Very Large Scale Integration Science and Technology. Materials for High Speed/High Density Applications, P192

[30]

Seidel T. E., 1985, Energy Beam-Solid Interactions and Transient Thermal Processing/1984 Symposium, P329

← 1 2 3 4 →