DOPANT REDISTRIBUTION IN SILICON-ON-SAPPHIRE FILMS DURING THERMAL ANNEALING

被引：3

作者：

COWERN, NEB

YALLUP, KJ

GODFREY, DJ

机构：

来源：

APPLIED PHYSICS LETTERS | 1986年 / 48卷 / 11期

关键词：

D O I：

10.1063/1.96695

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：704 / 706

页数：3

共 14 条

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