IV CHARACTERISTICS OF POLYSILICON RESISTORS AT HIGH ELECTRIC-FIELD AND THE NON-UNIFORM CONDUCTION MECHANISM

被引：16

作者：

LU, NCC

LU, CY

机构：

[1] NATL CHIAO TUNG UNIV,HSINCHU,TAIWAN

[2] AT&T BELL LABS,READING,PA 19604

来源：

SOLID-STATE ELECTRONICS | 1984年 / 27卷 / 8-9期

关键词：

D O I：

10.1016/0038-1101(84)90028-5

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：797 / 805

页数：9

共 36 条

[1] IV CHARACTERISTICS OF POLYCRYSTALLINE SILICON RESISTORS
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[2] TRANSPORT PROPERTIES OF POLYCRYSTALLINE SILICON FILMS
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RICCO, B
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[J]. JOURNAL OF APPLIED PHYSICS, 1978, 49 (11) : 5565 - 5570
[3] EXACT ANALYSIS OF THE CONDUCTIVITY OF POLYCRYSTALLINE SILICON FILMS
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[J]. JOURNAL OF APPLIED PHYSICS, 1980, 51 (08) : 4546 - 4547
[4] BRIDGE AND VAN-DER-PAUW SHEET RESISTORS FOR CHARACTERIZING LINE-WIDTH OF CONDUCTING LAYERS
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[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1978, 125 (04) : 650 - 654
[5] EXPERIMENTAL-STUDY OF VARIOUS CROSS SHEET RESISTOR TEST STRUCTURES
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[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1978, 125 (04) : 645 - 650
[6] ELECTRONIC PROCESSES AT GRAIN-BOUNDARIES IN POLYCRYSTALLINE SEMICONDUCTORS UNDER OPTICAL ILLUMINATION
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YANG, ES
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1977, 24 (04) : 397 - 402
[7] GRAIN-BOUNDARY STATES AND THE CHARACTERISTICS OF LATERAL POLYSILICON DIODES
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DEGROOT, JG
[J]. SOLID-STATE ELECTRONICS, 1982, 25 (01) : 67 - 71
[8] ENERGY-DISTRIBUTION OF TRAPPING STATES IN POLYCRYSTALLINE SILICON
HIRAE, S
HIROSE, M
OSAKA, Y
[J]. JOURNAL OF APPLIED PHYSICS, 1980, 51 (02) : 1043 - 1047
[9] HALL MOBILITY IN CHEMICALLY DEPOSITED POLYCRYSTALLINE SILICON
KAMINS, TI
[J]. JOURNAL OF APPLIED PHYSICS, 1971, 42 (11) : 4357 - &
[10] CHEMICALLY VAPOR-DEPOSITED POLYCRYSTALLINE-SILICON FILMS
KAMINS, TI
[J]. IEEE TRANSACTIONS ON PARTS HYBRIDS AND PACKAGING, 1974, PH10 (04): : 221 - 229

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