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THE FORMATION OF SHALLOW LOW-RESISTANCE SOURCE DRAIN REGIONS FOR VLSI CMOS TECHNOLOGIES
被引:12
作者
:
BUTLER, AL
论文数:
0
引用数:
0
h-index:
0
BUTLER, AL
FOSTER, DJ
论文数:
0
引用数:
0
h-index:
0
FOSTER, DJ
机构
:
来源
:
IEEE TRANSACTIONS ON ELECTRON DEVICES
|
1985年
/ 32卷
/ 02期
关键词
:
D O I
:
10.1109/T-ED.1985.21924
中图分类号
:
TM [电工技术];
TN [电子技术、通信技术];
学科分类号
:
0808 ;
0809 ;
摘要
:
引用
收藏
页码:150 / 155
页数:6
相关论文
共 8 条
[1]
RESIDUAL DEFECTS FOLLOWING RAPID THERMAL ANNEALING OF SHALLOW BORON AND BORON FLUORIDE IMPLANTS INTO PREAMORPHIZED SILICON
CARTER, C
论文数:
0
引用数:
0
h-index:
0
机构:
MICROELECTR CTR N CAROLINA,RES TRIANGLE PK,NC 27709
CARTER, C
MASZARA, W
论文数:
0
引用数:
0
h-index:
0
机构:
MICROELECTR CTR N CAROLINA,RES TRIANGLE PK,NC 27709
MASZARA, W
SADANA, DK
论文数:
0
引用数:
0
h-index:
0
机构:
MICROELECTR CTR N CAROLINA,RES TRIANGLE PK,NC 27709
SADANA, DK
ROZGONYI, GA
论文数:
0
引用数:
0
h-index:
0
机构:
MICROELECTR CTR N CAROLINA,RES TRIANGLE PK,NC 27709
ROZGONYI, GA
LIU, J
论文数:
0
引用数:
0
h-index:
0
机构:
MICROELECTR CTR N CAROLINA,RES TRIANGLE PK,NC 27709
LIU, J
WORTMAN, J
论文数:
0
引用数:
0
h-index:
0
机构:
MICROELECTR CTR N CAROLINA,RES TRIANGLE PK,NC 27709
WORTMAN, J
[J].
APPLIED PHYSICS LETTERS,
1984,
44
(04)
: 459
-
461
[2]
CHANNELING EFFECT OF LOW-ENERGY BORON IMPLANT IN (100) SILICON
LIU, TM
论文数:
0
引用数:
0
h-index:
0
LIU, TM
OLDHAM, WG
论文数:
0
引用数:
0
h-index:
0
OLDHAM, WG
[J].
IEEE ELECTRON DEVICE LETTERS,
1983,
4
(03)
: 59
-
62
[3]
Massetti G., 1983, IEEE T ELECTRON DEV, V30, P764
[4]
STRUCTURAL AND ELECTRICAL PROFILES FOR DOUBLE DAMAGE LAYERS IN ION-IMPLANTED SILICON
SADANA, DK
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV OXFORD,DEPT MET & SCI MAT,OXFORD,ENGLAND
UNIV OXFORD,DEPT MET & SCI MAT,OXFORD,ENGLAND
SADANA, DK
FLETCHER, J
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV OXFORD,DEPT MET & SCI MAT,OXFORD,ENGLAND
UNIV OXFORD,DEPT MET & SCI MAT,OXFORD,ENGLAND
FLETCHER, J
BOOKER, GR
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV OXFORD,DEPT MET & SCI MAT,OXFORD,ENGLAND
UNIV OXFORD,DEPT MET & SCI MAT,OXFORD,ENGLAND
BOOKER, GR
[J].
ELECTRONICS LETTERS,
1977,
13
(21)
: 632
-
633
[5]
RECRYSTALLIZATION OF IMPLANTED AMORPHOUS SILICON LAYERS .1. ELECTRICAL-PROPERTIES OF SILICON IMPLANTED WITH BF2+ OR SI++B+
TSAI, MY
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV ILLINOIS,DEPT ELECT ENGN,URBANA,IL 61801
UNIV ILLINOIS,DEPT ELECT ENGN,URBANA,IL 61801
TSAI, MY
STREETMAN, BG
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV ILLINOIS,DEPT ELECT ENGN,URBANA,IL 61801
UNIV ILLINOIS,DEPT ELECT ENGN,URBANA,IL 61801
STREETMAN, BG
[J].
JOURNAL OF APPLIED PHYSICS,
1979,
50
(01)
: 183
-
187
[6]
TSAUR BY, 1983, OCT ECS M, V83, P496
[7]
WILSON MC, 1984, COMMUNICATION
[8]
REDISTRIBUTION OF IMPLANTED DOPANTS AFTER METAL-SILICIDE FORMATION
WITTMER, M
论文数:
0
引用数:
0
h-index:
0
机构:
CALTECH,PASADENA,CA 91125
WITTMER, M
SEIDEL, TE
论文数:
0
引用数:
0
h-index:
0
机构:
CALTECH,PASADENA,CA 91125
SEIDEL, TE
[J].
JOURNAL OF APPLIED PHYSICS,
1978,
49
(12)
: 5827
-
5834
←
1
→
共 8 条
[1]
RESIDUAL DEFECTS FOLLOWING RAPID THERMAL ANNEALING OF SHALLOW BORON AND BORON FLUORIDE IMPLANTS INTO PREAMORPHIZED SILICON
CARTER, C
论文数:
0
引用数:
0
h-index:
0
机构:
MICROELECTR CTR N CAROLINA,RES TRIANGLE PK,NC 27709
CARTER, C
MASZARA, W
论文数:
0
引用数:
0
h-index:
0
机构:
MICROELECTR CTR N CAROLINA,RES TRIANGLE PK,NC 27709
MASZARA, W
SADANA, DK
论文数:
0
引用数:
0
h-index:
0
机构:
MICROELECTR CTR N CAROLINA,RES TRIANGLE PK,NC 27709
SADANA, DK
ROZGONYI, GA
论文数:
0
引用数:
0
h-index:
0
机构:
MICROELECTR CTR N CAROLINA,RES TRIANGLE PK,NC 27709
ROZGONYI, GA
LIU, J
论文数:
0
引用数:
0
h-index:
0
机构:
MICROELECTR CTR N CAROLINA,RES TRIANGLE PK,NC 27709
LIU, J
WORTMAN, J
论文数:
0
引用数:
0
h-index:
0
机构:
MICROELECTR CTR N CAROLINA,RES TRIANGLE PK,NC 27709
WORTMAN, J
[J].
APPLIED PHYSICS LETTERS,
1984,
44
(04)
: 459
-
461
[2]
CHANNELING EFFECT OF LOW-ENERGY BORON IMPLANT IN (100) SILICON
LIU, TM
论文数:
0
引用数:
0
h-index:
0
LIU, TM
OLDHAM, WG
论文数:
0
引用数:
0
h-index:
0
OLDHAM, WG
[J].
IEEE ELECTRON DEVICE LETTERS,
1983,
4
(03)
: 59
-
62
[3]
Massetti G., 1983, IEEE T ELECTRON DEV, V30, P764
[4]
STRUCTURAL AND ELECTRICAL PROFILES FOR DOUBLE DAMAGE LAYERS IN ION-IMPLANTED SILICON
SADANA, DK
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV OXFORD,DEPT MET & SCI MAT,OXFORD,ENGLAND
UNIV OXFORD,DEPT MET & SCI MAT,OXFORD,ENGLAND
SADANA, DK
FLETCHER, J
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV OXFORD,DEPT MET & SCI MAT,OXFORD,ENGLAND
UNIV OXFORD,DEPT MET & SCI MAT,OXFORD,ENGLAND
FLETCHER, J
BOOKER, GR
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV OXFORD,DEPT MET & SCI MAT,OXFORD,ENGLAND
UNIV OXFORD,DEPT MET & SCI MAT,OXFORD,ENGLAND
BOOKER, GR
[J].
ELECTRONICS LETTERS,
1977,
13
(21)
: 632
-
633
[5]
RECRYSTALLIZATION OF IMPLANTED AMORPHOUS SILICON LAYERS .1. ELECTRICAL-PROPERTIES OF SILICON IMPLANTED WITH BF2+ OR SI++B+
TSAI, MY
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV ILLINOIS,DEPT ELECT ENGN,URBANA,IL 61801
UNIV ILLINOIS,DEPT ELECT ENGN,URBANA,IL 61801
TSAI, MY
STREETMAN, BG
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV ILLINOIS,DEPT ELECT ENGN,URBANA,IL 61801
UNIV ILLINOIS,DEPT ELECT ENGN,URBANA,IL 61801
STREETMAN, BG
[J].
JOURNAL OF APPLIED PHYSICS,
1979,
50
(01)
: 183
-
187
[6]
TSAUR BY, 1983, OCT ECS M, V83, P496
[7]
WILSON MC, 1984, COMMUNICATION
[8]
REDISTRIBUTION OF IMPLANTED DOPANTS AFTER METAL-SILICIDE FORMATION
WITTMER, M
论文数:
0
引用数:
0
h-index:
0
机构:
CALTECH,PASADENA,CA 91125
WITTMER, M
SEIDEL, TE
论文数:
0
引用数:
0
h-index:
0
机构:
CALTECH,PASADENA,CA 91125
SEIDEL, TE
[J].
JOURNAL OF APPLIED PHYSICS,
1978,
49
(12)
: 5827
-
5834
←
1
→