THE FORMATION OF SHALLOW LOW-RESISTANCE SOURCE DRAIN REGIONS FOR VLSI CMOS TECHNOLOGIES

被引：12

作者：

BUTLER, AL

FOSTER, DJ

机构：

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1985年 / 32卷 / 02期

关键词：

D O I：

10.1109/T-ED.1985.21924

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

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收藏

页码：150 / 155

页数：6

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