PRECIPITATION AND DIFFUSIVITY OF ARSENIC IN SILICON

[1] AARON HB, 1980, J APPL PHYS, V41, P4404

[2] STABILITY OF SHAPE OF A SOLID CYLINDER GROWING IN A DIFFUSION FIELD [J]. JOURNAL OF APPLIED PHYSICS, 1965, 36 (02) : 632 - &

[3] EFFECT OF COMPLEX-FORMATION ON DIFFUSION OF ARSENIC IN SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1973, 44 (01) : 273 - 279

[4] FAIR RB, 1981, SILICON INTEGRATED C, P28

[5] FULLY-AUTOMATIC APPARATUS FOR THE DETERMINATION OF DOPING PROFILES IN SI BY ELECTRICAL MEASUREMENTS AND ANODIC-STRIPPING [J]. REVIEW OF SCIENTIFIC INSTRUMENTS, 1983, 54 (03) : 369 - 373

[6] GROSSKREUTZ JC, 1967, HDB XRAYS

[7] GENERALIZED-MODEL FOR THE CLUSTERING OF AS DOPANTS IN SI [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1982, 129 (08) : 1826 - 1831

[8] Hosemann R., 1962, DIRECT ANAL DIFFRACT

[9] Hu S. M., 1973, ATOMIC DIFFUSION SEM, P217

[10] HU SM, 1985, ELECTROCHEMICAL SOC, P465

[1] AARON HB, 1980, J APPL PHYS, V41, P4404

[2] STABILITY OF SHAPE OF A SOLID CYLINDER GROWING IN A DIFFUSION FIELD [J]. JOURNAL OF APPLIED PHYSICS, 1965, 36 (02) : 632 - &

[3] EFFECT OF COMPLEX-FORMATION ON DIFFUSION OF ARSENIC IN SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1973, 44 (01) : 273 - 279

[4] FAIR RB, 1981, SILICON INTEGRATED C, P28

[5] FULLY-AUTOMATIC APPARATUS FOR THE DETERMINATION OF DOPING PROFILES IN SI BY ELECTRICAL MEASUREMENTS AND ANODIC-STRIPPING [J]. REVIEW OF SCIENTIFIC INSTRUMENTS, 1983, 54 (03) : 369 - 373

[6] GROSSKREUTZ JC, 1967, HDB XRAYS

[7] GENERALIZED-MODEL FOR THE CLUSTERING OF AS DOPANTS IN SI [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1982, 129 (08) : 1826 - 1831

[8] Hosemann R., 1962, DIRECT ANAL DIFFRACT

[9] Hu S. M., 1973, ATOMIC DIFFUSION SEM, P217

[10] HU SM, 1985, ELECTROCHEMICAL SOC, P465