SIMULATION OF ULTRA-SMALL GAAS-MESFET USING QUANTUM MOMENT EQUATIONS

被引:71
作者
ZHOU, JR
FERRY, DK
机构
[1] Center for Solid State Electronics Research, Arizona State University, Tempe, AZ
关键词
D O I
10.1109/16.123465
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Ultra-small MESFET's have characteristic lengths comparable to quantum lengths: wavelength, mean free path, etc. In a first attempt to incorporate these quantum lengths, we develop a model based upon a set of quantum moment equations obtained from the Wigner function equation-of-motion. Interesting time-dependent current oscillation behavior has been observed when a step voltage is applied to the initial steady state. The oscillation frequency is peaked around 500 GHz, which is related to plasma response of the carriers in the channel. Quantum effects, such as barrier repulsion and penetration, have been demonstrated in the simulation. These effects modify the electron density distribution and current density distribution both in the channel and near the source. Modifications of the frequency spectrum of the oscillation current due to the quantum effects are obvious.
引用
收藏
页码:473 / 478
页数:6
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[21]   MODIFICATION OF ICCG METHOD FOR APPLICATION TO SEMICONDUCTOR-DEVICE SIMULATORS [J].
WADA, T ;
DANG, RLM .
ELECTRONICS LETTERS, 1982, 18 (06) :265-266