RESONANT-TUNNELING THROUGH DONOR MOLECULES

被引:47
作者
GEIM, AK
FOSTER, TJ
NOGARET, A
MORI, N
MCDONNELL, PJ
LASCALA, N
MAIN, PC
EAVES, L
机构
[1] Department of Physics, University of Nottingham
来源
PHYSICAL REVIEW B | 1994年 / 50卷 / 11期
关键词
D O I
10.1103/PhysRevB.50.8074
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We discuss the origin of zero-dimensional states, which give rise to resonant structure at the current onset in tunneling devices. The states can be identified as being due to random pairs of shallow donors.
引用
收藏
页码:8074 / 8077
页数:4
相关论文
共 23 条
[1]   SINGLE-ELECTRON CAPACITANCE SPECTROSCOPY OF DISCRETE QUANTUM LEVELS [J].
ASHOORI, RC ;
STORMER, HL ;
WEINER, JS ;
PFEIFFER, LN ;
PEARTON, SJ ;
BALDWIN, KW ;
WEST, KW .
PHYSICAL REVIEW LETTERS, 1992, 68 (20) :3088-3091
[2]   SPECTROSCOPIC EVIDENCE FOR INTERACTION BETWEEN SHALLOW HYDROGENIC DONORS IN GAAS, INP AND CDTE [J].
BAJAJ, KK ;
BIRCH, JR ;
EAVES, L ;
HOULT, RA ;
KIRKMAN, RF ;
SIMMONDS, PE ;
STRADLING, RA .
JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1975, 8 (04) :530-540
[3]  
BEIM AK, 1994, PHYS REV LETT, V72, P2061
[4]   TRANSPORT PROCESSES VIA LOCALIZED STATES IN THIN A-SI TUNNEL BARRIERS [J].
BENDING, SJ ;
BEASLEY, MR .
PHYSICAL REVIEW LETTERS, 1985, 55 (03) :324-327
[5]  
DELLOW MV, 1992, PHYS REV LETT, V58, P1754
[6]   OBSERVATION OF RESONANT TUNNELING IN SILICON INVERSION-LAYERS [J].
FOWLER, AB ;
TIMP, GL ;
WAINER, JJ ;
WEBB, RA .
PHYSICAL REVIEW LETTERS, 1986, 57 (01) :138-141
[7]   ENERGY-LEVELS OF HYDROGENIC IMPURITY STATES IN GAAS-GA1-XALXAS QUANTUM WELL STRUCTURES [J].
GREENE, RL ;
BAJAJ, KK .
SOLID STATE COMMUNICATIONS, 1983, 45 (09) :825-829
[8]  
GUERET P, 1992, PHYS REV LETT, V68, P1986
[9]   INCOHERENT MESOSCOPIC HOLE TUNNELING THROUGH BARRIER STATES IN P-TYPE ALXGA1-XAS CAPACITORS [J].
HICKMOTT, TW .
PHYSICAL REVIEW B, 1992, 46 (23) :15169-15180
[10]   EVIDENCE FOR RESONANT TUNNELING OF ELECTRONS VIA SODIUM-IONS IN SILICON DIOXIDE [J].
KOCH, RH ;
HARTSTEIN, A .
PHYSICAL REVIEW LETTERS, 1985, 54 (16) :1848-1851