EVIDENCE FOR RESONANT TUNNELING OF ELECTRONS VIA SODIUM-IONS IN SILICON DIOXIDE

被引：22

作者：

KOCH, RH

HARTSTEIN, A

机构：

来源：

PHYSICAL REVIEW LETTERS | 1985年 / 54卷 / 16期

关键词：

D O I：

10.1103/PhysRevLett.54.1848

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：1848 / 1851

页数：4

共 21 条

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