RESONANT TUNNELING VIA LOCALIZED IMPURITY STATES IN METAL-INSULATOR-METAL JUNCTIONS

被引：6

作者：

CHRISTENSEN, NDS

CHRISTENSEN, NE

机构：

来源：

SOLID STATE COMMUNICATIONS | 1978年 / 27卷 / 12期

关键词：

D O I：

10.1016/0038-1098(78)91546-6

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：1259 / 1261

页数：3

共 8 条

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ADLER, JG ;

CHEN, TT ;

STRAUS, J .

REVIEW OF SCIENTIFIC INSTRUMENTS, 1971, 42 (03) :362-&

[2] OBSERVATION OF LOCALIZED STATES IN BARRIER REGIONS OF METAL-INSULATOR-METAL TUNNEL-JUNCTIONS [J].

ADLER, JG ;

STRAUS, J .

PHYSICAL REVIEW B, 1976, 13 (04) :1377-1382

[3] TUNNELING CONDUCTANCE OF ASYMMETRICAL BARRIERS [J].

BRINKMAN, WF ;

DYNES, RC ;

ROWELL, JM .

JOURNAL OF APPLIED PHYSICS, 1970, 41 (05) :1915-&

[4] RESONANT TUNNELING IN SEMICONDUCTOR DOUBLE BARRIERS [J].

CHANG, LL ;

ESAKI, L ;

TSU, R .

APPLIED PHYSICS LETTERS, 1974, 24 (12) :593-595

[5] DIRECT CALCULATION OF TUNNELING CURRENT .3. EFFECT OF LOCALIZED IMPURITY STATES IN BARRIER [J].

COMBESCOT, R .

JOURNAL OF PHYSICS PART C SOLID STATE PHYSICS, 1971, 4 (16) :2611-+

[6]

GIAEVER I, 1968, PHYS REV LETT, V20, P1540

[7] TUNNELING TIME OF AN ELECTRON [J].

THORNBER, KK ;

MCGILL, TC ;

MEAD, CA .

JOURNAL OF APPLIED PHYSICS, 1967, 38 (05) :2384-&

[8]

[No title captured]

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