SPECTROSCOPY OF DONORS IN HIGH-PURITY GAAS GROWN BY MOLECULAR-BEAM EPITAXY

[1] ASFAR MN, 1980, P S GAAS RELATED COM, P547

[2] ON THE USE OF ASH3 IN THE MOLECULAR-BEAM EPITAXIAL-GROWTH OF GAAS [J]. APPLIED PHYSICS LETTERS, 1981, 38 (09) : 701 - 703

[3] SURFACE AND INTERFACE DEPLETION CORRECTIONS TO FREE CARRIER-DENSITY DETERMINATIONS BY HALL MEASUREMENTS [J]. SOLID-STATE ELECTRONICS, 1979, 22 (07) : 645 - 650

[4] Cho A. Y., 1975, Progress in Solid State Chemistry, V10, P157, DOI 10.1016/0079-6786(75)90005-9

[5] CHARACTERIZATION OF DONORS IN GAAS EPITAXIAL-FILMS BY FAR-INFRARED PHOTOCONDUCTIVE TECHNIQUES [J]. JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1978, 11 (06) : 945 - 953

[6] HIGH-PURITY GAAS PREPARED FROM TRIMETHYLGALLIUM AND ARSINE [J]. JOURNAL OF CRYSTAL GROWTH, 1981, 55 (01) : 10 - 23

[7] INHOMOGENEOUS BROADENING OF LYMAN-SERIES ABSORPTION OF SIMPLE HYDROGENIC DONORS [J]. PHYSICAL REVIEW B, 1976, 13 (04): : 1681 - 1691

[8] LOW T, UNPUB, P77402

[9] LOW TS, 1981, UNPUB P S GAAS RELAT

[10] HIGH-PURITY GAAS AND CR-DOPED GAAS EPITAXIAL LAYERS BY MBE [J]. JOURNAL OF APPLIED PHYSICS, 1979, 50 (10) : 6413 - 6416

[1] ASFAR MN, 1980, P S GAAS RELATED COM, P547

[2] ON THE USE OF ASH3 IN THE MOLECULAR-BEAM EPITAXIAL-GROWTH OF GAAS [J]. APPLIED PHYSICS LETTERS, 1981, 38 (09) : 701 - 703

[3] SURFACE AND INTERFACE DEPLETION CORRECTIONS TO FREE CARRIER-DENSITY DETERMINATIONS BY HALL MEASUREMENTS [J]. SOLID-STATE ELECTRONICS, 1979, 22 (07) : 645 - 650

[4] Cho A. Y., 1975, Progress in Solid State Chemistry, V10, P157, DOI 10.1016/0079-6786(75)90005-9

[5] CHARACTERIZATION OF DONORS IN GAAS EPITAXIAL-FILMS BY FAR-INFRARED PHOTOCONDUCTIVE TECHNIQUES [J]. JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1978, 11 (06) : 945 - 953

[6] HIGH-PURITY GAAS PREPARED FROM TRIMETHYLGALLIUM AND ARSINE [J]. JOURNAL OF CRYSTAL GROWTH, 1981, 55 (01) : 10 - 23

[7] INHOMOGENEOUS BROADENING OF LYMAN-SERIES ABSORPTION OF SIMPLE HYDROGENIC DONORS [J]. PHYSICAL REVIEW B, 1976, 13 (04): : 1681 - 1691

[8] LOW T, UNPUB, P77402

[9] LOW TS, 1981, UNPUB P S GAAS RELAT

[10] HIGH-PURITY GAAS AND CR-DOPED GAAS EPITAXIAL LAYERS BY MBE [J]. JOURNAL OF APPLIED PHYSICS, 1979, 50 (10) : 6413 - 6416