SINGLE EVENT UPSET (SEU) OF SEMICONDUCTOR-DEVICES - A SUMMARY OF JPL TEST DATA

被引：17

作者：

NICHOLS, DK

PRICE, WE

MALONE, CJ

机构：

来源：

关键词：

D O I：

10.1109/TNS.1983.4333164

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：4520 / 4525

页数：6

共 23 条

[1] SIMULATION OF COSMIC-RAY INDUCED SOFT ERRORS AND LATCHUP IN INTEGRATED-CIRCUIT COMPUTER MEMORIES
KOLASINSKI, WA
BLAKE, JB
ANTHONY, JK
PRICE, WE
SMITH, EC
[J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1979, 26 (06) : 5087 - 5091
[2] A PREDICTION MODEL FOR BIPOLAR RAMS IN A HIGH-ENERGY ION-PROTON ENVIRONMENT
MYERS, DK
PRICE, WE
NICHOLS, DK
[J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1981, 28 (06) : 3959 - 3961
[3] THE DEPENDENCE OF SINGLE EVENT UPSET ON PROTON ENERGY (15-590 MEV)
NICHOLS, DK
PRICE, WE
ANDREWS, JL
[J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1982, 29 (06) : 2081 - 2084
[4] NICHOLS DK, 1982, 514J17082 INT MEM
[5] NICHOLS DK, 1982, JPL90122 REP
[6] NICHOLS DK, 1982, JPL D38 REP, P24
[7] NICHOLS DK, 1982, 514J14782 INT MEM
[8] NICHOLS DK, 1981, 514J5081 INT MEM
[9] NICHOLS DK, 1980, JPL900971 IND U REP
[10] NICHOLS DK, 1981, JPL900984 UC BERK RE