PHOTOEMISSION-STUDY OF THE BAND BENDING AND CHEMISTRY OF SODIUM SULFIDE ON GAAS(100)

被引:18
作者
SPINDT, CJ [1 ]
BESSER, RS [1 ]
CAO, R [1 ]
MIYANO, K [1 ]
HELMS, CR [1 ]
SPICER, WE [1 ]
机构
[1] WATKINS JOHNSON CO,PALO ALTO,CA 94304
来源
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS | 1989年 / 7卷 / 03期
关键词
D O I
10.1116/1.575878
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
引用
收藏
页码:2466 / 2468
页数:3
相关论文
共 4 条
  • [1] BESSER RS, 1988, APPL PHYS LETT, V52, P20
  • [2] CONTROL OF FERMI LEVEL PINNING AND RECOMBINATION PROCESSES AT GAAS-SURFACES BY CHEMICAL AND PHOTOCHEMICAL TREATMENTS
    HASEGAWA, H
    ISHII, H
    SAWADA, T
    SAITOH, T
    KONISHI, S
    LIU, YA
    OHNO, H
    [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1988, 6 (04): : 1184 - 1192
  • [3] DRAMATIC ENHANCEMENT IN THE GAIN OF A GAAS/ALGAAS HETEROSTRUCTURE BIPOLAR-TRANSISTOR BY SURFACE CHEMICAL PASSIVATION
    SANDROFF, CJ
    NOTTENBURG, RN
    BISCHOFF, JC
    BHAT, R
    [J]. APPLIED PHYSICS LETTERS, 1987, 51 (01) : 33 - 35
  • [4] THE ADVANCED UNIFIED DEFECT MODEL FOR SCHOTTKY-BARRIER FORMATION
    SPICER, WE
    LILIENTALWEBER, Z
    WEBER, E
    NEWMAN, N
    KENDELEWICZ, T
    CAO, R
    MCCANTS, C
    MAHOWALD, P
    MIYANO, K
    LINDAU, I
    [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1988, 6 (04): : 1245 - 1251