ANTI-STOKES EMISSION RELATED TO EL2 IN GAAS

被引：2

作者：

MORI, Y

ONOZAWA, K

OHKURA, H

CHIBA, Y

机构：

[1] OKAYAMA UNIV SCI,DEPT ELECTR ENGN,OKAYAMA 700,JAPAN

[2] SCI UNIV TOKYO,DEPT APPL PHYS,TOKYO 162,JAPAN

来源：

JOURNAL OF LUMINESCENCE | 1991年 / 48-9卷 / pt 2期

关键词：

D O I：

10.1016/0022-2313(91)90244-P

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

Two anti-Stokes emission bands peaking at 1.0 and 1.34 eV have been observed in GaAs excited by 0.93 eV laser light. The relation of these two bands to the EL2 defect is investigated on the basis of the photoquenching and optical properties of EL2. Mechanisms to yield the anti-Stokes emission bands are discussed with reference to metastable states of EL2. The emission energy of the 1.0 eV band is close to the intracenter transition of EL2 and the L-minimum of the conduction band. The 1.34 eV band is probably related to a recombination process between a free electron and a Cu-related acceptor in GaAs.

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页码：800 / 802

页数：3

相关论文

共 12 条

[1] DEEP-LEVEL OPTICAL SPECTROSCOPY IN GAAS [J].

CHANTRE, A ;

VINCENT, G ;

DUBOIS .

PHYSICAL REVIEW B, 1981, 23 (10) :5335-5359

[2] THEORETICAL EVIDENCE FOR AN OPTICALLY INDUCIBLE STRUCTURAL TRANSITION OF THE ISOLATED AS ANTISITE IN GAAS - IDENTIFICATION AND EXPLANATION OF EL2 [J].

DABROWSKI, J ;

SCHEFFLER, M .

PHYSICAL REVIEW LETTERS, 1988, 60 (21) :2183-2186

[3] PHOTON-INDUCED RECOVERY OF PHOTOQUENCHED EL2 INTRACENTER ABSORPTION IN GAAS [J].

FISCHER, DW .

APPLIED PHYSICS LETTERS, 1987, 50 (24) :1751-1753

[4] RESOLVED STRUCTURE IN THE QUENCHING BAND OF THE EL2 CENTER IN GAAS, STUDIED BY INFRARED-SPECTROSCOPY [J].

FUCHS, F ;

DISCHLER, B .

APPLIED PHYSICS LETTERS, 1987, 51 (25) :2115-2117

[5] DEEP CENTER EL2 AND ANTI-STOKES LUMINESCENCE IN SEMI-INSULATING GAAS [J].

JOHNSON, EJ ;

KAFALAS, J ;

DAVIES, RW ;

DYES, WA .

APPLIED PHYSICS LETTERS, 1982, 40 (11) :993-995

[6] INTRACENTER TRANSITIONS IN THE DOMINANT DEEP LEVEL (EL2) IN GAAS [J].

KAMINSKA, M ;

SKOWRONSKI, M ;

LAGOWSKI, J ;

PARSEY, JM ;

GATOS, HC .

APPLIED PHYSICS LETTERS, 1983, 43 (03) :302-304

[7] A NEW EMISSION BAND RELATED TO EL2 IN GAAS [J].

MORI, Y ;

YOSHIMURA, Y ;

KAMODA, H ;

OHKURA, H ;

CHIBA, Y .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1989, 28 (12) :L2122-L2124

[8]

MORI Y, 1989, P INT C DEFECTS CONT

[9]

MORI Y, 1989, P US JAPAN SEMINAR A, P189

[10]

QUEISSER HJ, 1966, PHYS REV, V13, P4895