IN-SITU OBSERVATION OF CHEMICAL-VAPOR-DEPOSITION GROWTH OF EPITAXIAL SIGE THIN-FILMS BY REFLECTION SUPPORTED PYROMETRIC INTERFEROMETRY

被引：4

作者：

RITTER, G ^{[1
]}

TILLACK, B ^{[1
]}

WEIDNER, M ^{[1
]}

ZAUMSEIL, P ^{[1
]}

BOBEL, FG ^{[1
]}

HERTEL, B ^{[1
]}

MOLLER, H ^{[1
]}

机构：

[1] FRAUNHOFER INST INTEGRIERTE SCHAULTUNGEN IIS A,D-91058 ERLANGEN,GERMANY

来源：

JOURNAL OF CRYSTAL GROWTH | 1995年 / 146卷 / 1-4期

关键词：

D O I：

10.1016/0022-0248(94)00481-1

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Reflexion supported pyrometric interferometry (PYRITTE) has been used for the in-situ observation of Si-(1-x)Ge-x heteroepitaxial growth on Si-wafers in a rapid thermal chemical vapour deposition (RTCVD)-reactor at 500 degrees C. The thickness and the optical parameters of thin films at 500 degrees C have been evaluated by real time computer fitting of the measured reflectivity data at the wavelength lambda = 650 nm. These parameters have been compared with those obtained ex-situ at room temperature by ellipsometry in the wavelength range 240-700 nm. The thickness of growing Si-(1-x)Ge-x film depends on time linearly. The temperature coefficient of the real part of the refractive index has been found as 3 x 10(-4) K-1.

引用

页码：119 / 124

页数：6

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