LOW-PRESSURE CHEMICAL VAPOR-DEPOSITION OF TUNGSTEN ON POLYCRYSTALLINE AND SINGLE-CRYSTAL SILICON VIA THE SILICON REDUCTION

被引：42

作者：

TSAO, KY ^{[1
]}

BUSTA, HH ^{[1
]}

机构：

[1] GOULD RES CTR,ROLLING MEADOWS,IL 60008

来源：

关键词：

D O I：

10.1149/1.2115387

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：2702 / 2708

页数：7

共 12 条

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[8] Moriya T., 1983, 1983 Symposium on VLSI Technology. Digest of Technical Papers, P96
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