HIGH-FREQUENCY GALLIUM-ARSENIDE CURRENT MIRROR

被引：7

作者：

TOUMAZOU, C ^{[1
]}

HAIGH, DG ^{[1
]}

机构：

[1] UNIV LONDON UNIV COLL,LONDON WC1E 7JE,ENGLAND

来源：

ELECTRONICS LETTERS | 1990年 / 26卷 / 21期

关键词：

Circuit design; Current mirrors; Gallium arsenide;

D O I：

10.1049/el:19901154

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A new negative current mirror using w-channel GaAs MESFETs is proposed. The circuit combines the advantages of linearity and good high frequency performance. Applications are as a general high speed circuit building block and for high frequency amplification. © 1990, The Institution of Electrical Engineers. All rights reserved.

引用

页码：1802 / 1804

页数：3

共 6 条

[1] HIGH-FREQUENCY GALLIUM-ARSENIDE LINEARIZED TRANSCONDUCTOR FOR COMMUNICATIONS [J].