PROPERTIES OF POLYSILICON FILMS ANNEALED BY A RAPID THERMAL ANNEALING PROCESS

被引：15

作者：

RISTIC, L

KNIFFIN, ML

GUTTERIDGE, R

HUGHES, HG

机构：

[1] Motorola, Inc. SPS, SCT, Phoenix, AZ 85008

来源：

THIN SOLID FILMS | 1992年 / 220卷 / 1-2期

关键词：

D O I：

10.1016/0040-6090(92)90556-Q

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

This paper describes the electrical and mechanical properties of polysilicon films annealed by a rapid thermal annealing (RTA) process. The results show that doped polysilicon films annealed by RTA process have conductivity below 100 OMEGA sq-1. This is sufficient for application for integrated micromechanical structures. Also, the stress non-uniformity, as well as the average stress in polysilicon films annealed by RTA, is acceptable for manufacturing flat cantilever beams. The average stress of 2 mum polysilicon films is compressive and typically less than 200 MPa.

引用

页码：106 / 110

页数：5

共 13 条

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