IMPROVED BROOKS MOBILITY FORMULA FOR DISORDER SCATTERING IN SEMICONDUCTOR ALLOYS

被引：3

作者：

NISHINAGA, T ^{[1
]}

HIRAMATSU, K ^{[1
]}

机构：

[1] NAGOYA UNIV,DEPT ELECT ENGN & ELECTR,NAGOYA,AICHI 464,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1983年 / 22卷 / 01期

关键词：

Compendex;

D O I：

10.1143/JJAP.22.113

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：113 / 116

页数：4

共 10 条

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[9] A SYSTEMATIC APPROACH TO PROBLEMS OF RANDOM LATTICES .I. A SELF-CONTAINED FIRST-ORDER APPROXIMATION TAKING INTO ACCOUNT EXCLUSION EFFECT [J].

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[10] NOTE ON ELECTRONIC STATE OF RANDOM LATTICE .2. [J].

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PROGRESS OF THEORETICAL PHYSICS, 1966, 35 (03) :357-+

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