HOT PHONONS AND INSTABILITIES IN GAAS/GAALAS STRUCTURES

被引：10

作者：

BALKAN, N

GUPTA, R

RIDLEY, BK

EMENY, M

ROBERTS, J

GOODRIDGE, I

机构：

[1] PLESSEY RES,ALLEN CLARK RES CTR,CASWELL,ENGLAND

[2] ROYAL SIGNALS & RADAR ESTAB,MALVERN WR14 3PS,WORCS,ENGLAND

[3] UNIV SHEFFIELD,DEPT ELECTR,SHEFFIELD S10 2TN,S YORKSHIRE,ENGLAND

来源：

SOLID-STATE ELECTRONICS | 1989年 / 32卷 / 12期

关键词：

D O I：

10.1016/0038-1101(89)90287-6

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1641 / 1646

页数：6

共 18 条

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[2]

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[7]

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[8] MEASUREMENTS OF HOT-ELECTRON CONDUCTION AND REAL-SPACE TRANSFER IN GAAS-ALXGA1-X AS HETEROJUNCTION LAYERS [J].

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[9] SPECTROSCOPY OF HOT CARRIERS IN SEMICONDUCTORS [J].

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[10] ELECTRON VELOCITY AT HIGH ELECTRIC-FIELDS IN ALGAAS/GAAS MODULATION-DOPED HETEROSTRUCTURES [J].

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