NONEQUILIBRIUM ELECTRON-PHONON SCATTERING IN SEMICONDUCTOR HETEROJUNCTIONS

被引:57
作者
CAI, W
MARCHETTI, MC
LAX, M
机构
[1] CUNY,GRAD SCH,NEW YORK,NY 10021
[2] AT&T BELL LABS,MURRAY HILL,NJ 07974
来源
PHYSICAL REVIEW B | 1986年 / 34卷 / 12期
关键词
D O I
10.1103/PhysRevB.34.8573
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
引用
收藏
页码:8573 / 8580
页数:8
相关论文
共 23 条
[1]   ELECTRONIC-PROPERTIES OF TWO-DIMENSIONAL SYSTEMS [J].
ANDO, T ;
FOWLER, AB ;
STERN, F .
REVIEWS OF MODERN PHYSICS, 1982, 54 (02) :437-672
[2]  
BORN M, 1985, DYNAMICAL THEORY CRY, P82
[3]   SCATTERING BY POLAR-OPTICAL PHONONS IN A QUASI-2-DIMENSIONAL SEMICONDUCTOR [J].
FERRY, DK .
SURFACE SCIENCE, 1978, 75 (01) :86-91
[4]   IMPURITY AND PHONON-SCATTERING IN LAYERED STRUCTURES [J].
HESS, K .
APPLIED PHYSICS LETTERS, 1979, 35 (07) :484-486
[5]   ANHARMONIC DECAY OF OPTICAL PHONONS [J].
KLEMENS, PG .
PHYSICAL REVIEW, 1966, 148 (02) :845-&
[6]   HOT PHONON DYNAMICS [J].
KOCEVAR, P .
PHYSICA B & C, 1985, 134 (1-3) :155-163
[7]   DYNAMICAL SCREENING AND CARRIER MOBILITY IN GAAS-GAALAS HETEROSTRUCTURES [J].
LEI, XL .
JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1985, 18 (20) :L593-L597
[8]   INTERSUBBAND SCATTERING EFFECT ON THE MOBILITY OF A SI (100) INVERSION LAYER AT LOW-TEMPERATURES [J].
MORI, S ;
ANDO, T .
PHYSICAL REVIEW B, 1979, 19 (12) :6433-6441
[9]  
PELETMIN.S, 1968, SOV PHYS JETP-USSR, V26, P773
[10]   ELECTRON-TRANSPORT IN POLAR HETEROLAYERS [J].
PRICE, PJ .
SURFACE SCIENCE, 1982, 113 (1-3) :199-210