NONEQUILIBRIUM ELECTRON-PHONON SCATTERING IN SEMICONDUCTOR HETEROJUNCTIONS

被引:58
作者
CAI, W
MARCHETTI, MC
LAX, M
机构
[1] CUNY,GRAD SCH,NEW YORK,NY 10021
[2] AT&T BELL LABS,MURRAY HILL,NJ 07974
来源
PHYSICAL REVIEW B | 1986年 / 34卷 / 12期
关键词
D O I
10.1103/PhysRevB.34.8573
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
引用
收藏
页码:8573 / 8580
页数:8
相关论文
共 23 条
[11]   TWO-DIMENSIONAL ELECTRON-TRANSPORT IN SEMICONDUCTOR LAYERS .1. PHONON-SCATTERING [J].
PRICE, PJ .
ANNALS OF PHYSICS, 1981, 133 (02) :217-239
[12]  
PRICE PJ, 1985, PHYSICA B & C, V134, P164, DOI 10.1016/0378-4363(85)90337-7
[13]   THE ELECTRON PHONON INTERACTION IN QUASI-2-DIMENSIONAL SEMICONDUCTOR QUANTUM-WELL STRUCTURES [J].
RIDLEY, BK .
JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1982, 15 (28) :5899-5917
[14]  
RIDLEY BK, 1983, J PHYS C SOLID STATE, V16, P6971
[15]   TIME-RESOLVED PHOTOLUMINESCENCE OF TWO-DIMENSIONAL HOT CARRIERS IN GAAS-ALGAAS HETEROSTRUCTURES [J].
RYAN, JF ;
TAYLOR, RA ;
TURBERFIELD, AJ ;
MACIEL, A ;
WORLOCK, JM ;
GOSSARD, AC ;
WIEGMANN, W .
PHYSICAL REVIEW LETTERS, 1984, 53 (19) :1841-1844
[16]   ENERGY-LOSS RATES FOR HOT-ELECTRONS AND HOLES IN GAAS QUANTUM WELLS [J].
SHAH, J ;
PINCZUK, A ;
GOSSARD, AC ;
WIEGMANN, W .
PHYSICAL REVIEW LETTERS, 1985, 54 (18) :2045-2048
[17]   HOT-ELECTRONS IN MODULATION-DOPED GAAS-ALGAAS HETEROSTRUCTURES [J].
SHAH, J ;
PINCZUK, A ;
STORMER, HL ;
GOSSARD, AC ;
WIEGMANN, W .
APPLIED PHYSICS LETTERS, 1984, 44 (03) :322-324
[18]   PROPERTIES OF ELECTRONS IN SEMICONDUCTOR INVERSION LAYERS WITH MANY OCCUPIED ELECTRIC SUBBANDS .1. SCREENING AND IMPURITY SCATTERING [J].
SIGGIA, ED ;
KWOK, PC .
PHYSICAL REVIEW B, 1970, 2 (04) :1024-&
[19]   ELECTRON-ENERGY LEVELS IN GAAS-GA1-XALXAS HETEROJUNCTIONS [J].
STERN, F ;
DASSARMA, S .
PHYSICAL REVIEW B, 1984, 30 (02) :840-848
[20]   ELECTRON-MOBILITY IN MODULATION-DOPED HETEROSTRUCTURES [J].
WALUKIEWICZ, W ;
RUDA, HE ;
LAGOWSKI, J ;
GATOS, HC .
PHYSICAL REVIEW B, 1984, 30 (08) :4571-4582