HIGH-SENSITIVITY 5 GBIT/S OPTICAL RECEIVER MODULE USING SI IC AND GAINAS APD

被引：14

作者：

FUJITA, S

SUZAKI, T

MATSUOKA, A

MIYAZAKI, S

TORIKAI, T

NAKATA, T

SHIKADA, M

机构：

[1] NEC CORP LTD,DIV COMPOUND SEMICOND DEV,KAWASAKI,KANAGAWA 213,JAPAN

[2] NEC CORP LTD,DIV CONSUMER LSI,KAWASAKI,KANAGAWA 213,JAPAN

来源：

ELECTRONICS LETTERS | 1990年 / 26卷 / 03期

关键词：

Optical communications; Optoelectronics; Silicon;

D O I：

10.1049/el:19900118

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A 5 Gbit/s optical receiver module was developed by using a wideband transimpedance Si IC and a high gain-bandwidth product GaInAs APD. A 6 GHz bandwidth Si IC utilising a f1=20 GHz Si MMIC process, bare chip mounting of a Si IC and an APD to minimise parasitic capacitance, made it possible to realise high speed operation and high receiver sensitivity of -31.8 dBm. © 1990, The Institution of Electrical Engineers. All rights reserved.

引用

页码：175 / 176

页数：2