SELECTIVE EPITAXIAL-GROWTH BY UHV-CVD USING SI2H6 AND CL-2

被引：47

作者：

TATSUMI, T ^{[1
]}

AKETAGAWA, K ^{[1
]}

HIROI, M ^{[1
]}

SAKAI, J ^{[1
]}

机构：

[1] ANELVA CORP,FUCHU,TOKYO 183,JAPAN

来源：

JOURNAL OF CRYSTAL GROWTH | 1992年 / 120卷 / 1-4期

关键词：

D O I：

10.1016/0022-0248(92)90402-5

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

The conditions under which selective epitaxial growth (SEG) is achieved in UHV-CVD with Si2H6 are determined by the amount of Si2H6 molecules being supplied, and there is a critical gas supply amount (F(c)) beyond which SEG will break down and lose its selectivity. The value of F(c) is itself determined by two factors, growth temperature and the material used for masking, i.e. SiO2, Si3N4. We found that this limiting factor of F(c) was increased through the addition of a small amount of Cl2, and that after such addition, the resulting decrease in growth rate is minimal.

引用

页码：275 / 278

页数：4