INGAAS/INP MULTIPLE QUANTUM-WELL TUNABLE BRAGG REFLECTOR

被引：8

作者：

BLUM, O ^{[1
]}

ZUCKER, JE ^{[1
]}

CHIU, TH ^{[1
]}

DIVINO, MD ^{[1
]}

JONES, KL ^{[1
]}

CHU, SNG ^{[1
]}

GUSTAFSON, TK ^{[1
]}

机构：

[1] AT&T BELL LABS,HOLMDEL,NJ 07733

来源：

APPLIED PHYSICS LETTERS | 1991年 / 59卷 / 23期

关键词：

D O I：

10.1063/1.105815

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We demonstrate a voltage-tunable distributed Bragg reflector grown by chemical beam epitaxy that utilizes 31 periods of alternating InGaAs/InP multiple quantum well and bulk InP quarter-wave layers. We obtain a differential change in transmission of 14% at 1570 nm wavelength for an applied field of 2.25 X 10(4) V/cm. We find good agreement between the experimental results and transmission spectra calculated using the optical transmission matrix method.

引用

页码：2971 / 2973

页数：3

共 19 条

[1] QUANTUM-CONFINED STARK-EFFECT IN INGAAS INP QUANTUM-WELLS GROWN BY ORGANOMETALLIC VAPOR-PHASE EPITAXY [J].