RAMAN-SCATTERING MEASUREMENTS AND FRACTON INTERPRETATION OF VIBRATIONAL PROPERTIES OF AMORPHOUS-SILICON

被引：23

作者：

IVANDA, M

机构：

[1] Ruder Boković Institute, 41000 Zagreb

来源：

PHYSICAL REVIEW B | 1992年 / 46卷 / 22期

关键词：

D O I：

10.1103/PhysRevB.46.14893

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Results of Raman scattering on a-Si:H films are presented at frequencies from 20 to 2500 cm-1. The frequency and temperature dependence of the Stokes/anti-Stokes ratio of Raman scattering intensity show the boson character of the observed broad background signal. It has been shown that the fractal model can be successfully applied to a-Si:H as well. The crossover frequency omega(co1) between phonon and fracton regimes and the fractal exponent (sigma + d - D)d/D, obtained from the frequency dependence on the Raman scattering intensity, have been determined.

引用

页码：14893 / 14896

页数：4

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