INTERSTITIAL LI DOPING OF A-SI-H

被引：16

作者：

WINER, K

STREET, RA

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1989年 / 65卷 / 06期

关键词：

D O I：

10.1063/1.342841

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：2272 / 2281

页数：10

共 18 条

[1] INTERSTITIAL DOPING OF AMORPHOUS SILICON [J].

BEYER, W ;

FISCHER, R .

APPLIED PHYSICS LETTERS, 1977, 31 (12) :850-852

[2]

FULLER SC, 1953, PHYS REV, V91, P193

[3]

KAKALIOS J, 1987, 157 AIP C P, P179

[4] CONDENSATION OF IMPURITIES IN SEMICONDUCTORS (SI+LI) [J].

KASTALSKII, AA ;

MALTSEV, SB .

SOLID STATE COMMUNICATIONS, 1975, 17 (02) :107-111

[5]

LECOMBER PG, 1981, FUNDAMENTAL PHYSICS, V25, P46

[6]

NABOR JA, 1971, RADIAT EFF, V8, P239

[7] DIFFUSION OF LI IN SI AT HIGH-T AND THE ISOTOPE EFFECT [J].

PELL, EM .

PHYSICAL REVIEW, 1960, 119 (03) :1014-1021

[8]

PIERZ K, 1988, 19TH P INT C PHYS SE

[9] EFFECTIVE CHARGE OF LI IN A-SI-H BY TRANSPORT MEASUREMENTS [J].

SCHOLCH, HP ;

WEISER, M ;

KALBITZER, S ;

MULLER, C .

SOLID STATE COMMUNICATIONS, 1987, 64 (12) :1419-1422

[10] PHOTO-LUMINESCENCE OF LITHIUM-DOPED AMORPHOUS-SILICON [J].

SPIES, HW ;

ZANGMEISTER, D ;

FISCHER, R .

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1980, 58 (01) :83-86

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